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PartDevice functionTest characteristicsBeam detailsResultsDate of testCross sectionDegradation levelEDMS number / Contact person
USB repeater unit
Miscellaneous
Unknown
USB Extender Cable
Technology: CMOS
LOT Number: -
SEL, ΔVout
No of tested samples: 1
H4IRRAD
Particle source: Mixed

Dose rate: 8.5 rad/s
All parameters passed up to 12 krad(Si). Degradation of 3.3 V voltage regulator Vout of about -1.8 % (-50 mV/100 Gy). Expected failure due to TID after about 32 krad(Si). 6 non-destructive SEL registered after a fluence of 1.89∙10^11 p/cm²15/11/20123.18x10^-11 (SEL)x > 12 krad(Si) SEL < 1.89∙10^11 p/cm2 (HEH) 1386988
FMMT 491
Transistor
Zetex Semiconductors
Power Transistors (NPN)
Technology: Bipolar
LOT Number: -
Vbe, Vce, hfe (DC gain)
No of tested samples: 9
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
Flux: 1.6x10^8 p/cm2/s
BJTs tested in three conditions up to 50.0 krad(Si): Saturated, blocked, non-conducting. - Saturated: No variations - Conductive: Gain degradation at 10 mA/100 mA: -43 %/ -33 % - Blocked: Gain degradation at 10 mA/100 mA: -34 %/ -23 %22/11/2013 x > 50 krad(Si) 1387205
FMMT 591
Transistor
Zetex Semiconductors
Power Transistors (PNP)
Technology: Bipolar
LOT Number: -
Vbe, Vce, hfe (DC gain)
No of tested samples: 9
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
Flux: 1.6x10^8 p/cm2/s
BJTs tested in three conditions up to 50.0 krad(Si): Saturated, blocked, non-conducting. - Saturated: No variations - Conductive: Gain degradation at 10 mA/100 mA: -34 %/ -27 % - Blocked: Gain degradation at 10 mA/100 mA: -29 %/ -22 %22/11/2013 x > 50 krad(Si) 1387205
OP2177AR
Operational Amplifier
Analog Devices
Dual High Precision Operational Amplifier
Technology: Unknown
LOT Number: A#317 9168 A#245 8283 A#243 3850 (Ref)
SET, Ibias, ΔVout, SR
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
Flux: 1.6x10^8 p/cm2/s
Ibias exceeded the manufactures’ limits of ±2 nA after 8-10 Gy and reached a final value of -12 nA to -218 nA after 50.0 krad(Si). Slew rate (SR) exceeded limits after 20.0 krad(Si). No variation of Vout observed22/11/2013 Ibias < 0.8 krad(Si) Vout > 50 krad(Si) SR < 20 krad(Si) 1387205
ADS7852Y
Converter
Burr-Brown
12 Bit ADC
Technology: CMOS
LOT Number: B10 #241
SEU, SEL, VRef
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
Flux: 1.6x10^8 p/cm2/s
A total amount of 31 SEUs was detected after a fluence of 2.79x10^12 p/cm2. The upper limit of the cross-section is evaluated to 6.25x10^-12 cm2. Current consumption started increasing after 160 Gy with 60 uA/Gy. Icc at 18-20 mA after 50.0 krad(Si)22/11/20136.25x10^-12 (SEU)x > 50 krad(Si) SEL < 9.3x10^11 p/cm2 1387205
74LVC14APW
Miscellaneous
Philips
Schmitt-Trigger
Technology: CMOS
LOT Number: 1C5K003 UnD11 36D
SET, VOH, VOL, tpHL, tpLH, T+, T-
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
Flux: 1.6x10^8 p/cm2/s
All parameters passed up to 50.0 krad(Si). No variations on the tested parameters observed22/11/2013 x > 50 krad(Si) 1387205
FGDOS
Miscellaneous
IC-Malaga
Dosimeter
Technology: CMOS
TID
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 500-7000 rad/s
Flux: 0.27-4.2x10^7 p/cm2/s
The sensors have been tested against different dose rates and the sensitivity has been measured for each dose rate. The long term TID effect has been assessed and the causes of this effect have been found thanks to the isochronal annealing.25/04/2014   1387215
BCP53
Transistor
NXP
Power BJT
Technology: PNP
LOT Number: -
SET, SEB, Gain
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.3 rad/s
All parameters passed up to 25.4 krad(Si)15/04/2011 x > 25.4 krad(Si) 1171985
BCP56
Transistor
NXP
Power BJT
Technology: NPN
LOT Number: -
SET, SEB, Gain
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
All parameters passed up to 30.6 krad(Si)15/04/2011 x > 30.6 krad(Si) 1171985
BSR18A
Transistor
Philips
Switching BJT
Technology: PNP
LOT Number: -
SET, Gain
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.5 rad/s
All parameters passed up to 30.6 krad(Si)15/04/2011 x > 30.6 krad(Si) 1171985
BSR17A
Transistor
Philips
Switching BJT
Technology: NPN
LOT Number: -
SET, Gain
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.3 rad/s
All parameters passed up to 29.9 krad(Si)15/04/2011 x > 29.9 krad(Si) 1171985
TLP124
Optocoupler
Unknown
Optocoupler
Technology: Unknown
LOT Number: -
SET, CTR, Response time
No of tested samples: 22
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.8 rad/s
CTR out of specifications for Ie = 1, 10 mA to 4 krad(Si), 9.3 krad(Si), respectively. Response time increase of 100 % after 25 krad(Si)02/09/2011 CTR < 4.0 krad(Si) (Ie = 1 mA) CTR < 9.3 krad(Si) (Ie = 10 mA) 1171986
4N35
Optocouplers
FairChild
Optocoupler
Technology: Unknown
LOT Number: -
SET, CTR, Response time
No of tested samples: 18
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.8 rad/s
CTR out of specifications for Ie = 1, 10 mA at 1.5 krad(Si), 1.0 krad(Si), respectively. Response time increase of 100 % after 15 krad(Si)02/09/2011 CTR < 1.5 krad(Si) (Ie = 1 mA) CTR < 1.0 krad(Si) (Ie = 10 mA) 1171986
HCNR
Optocouplers
Hewlett-Packard
Optocoupler
Technology: Unknown
LOT Number: -
CTR
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.8 rad/s
CTR out of specifications for Ie = 5, 47 μA at 15 krad(Si), 17.5 krad(Si), respectively02/09/2011 CTR < 15.0 krad(Si) (Ie = 5 μA) CTR < 17.5 krad(Si) (Ie = 47 μA) 1171986
Cypress CY62157EV30
SRAM Memory
Cypress
SRAM Memory 8 Mbit
Technology: 90 nm
SEU
No of tested samples:
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 2.3 krad(Si) at 3.3 V17/02/2012(1.5±0.3)x10^-13 (SEU 3.3V)x > 2.3 krad(Si) 1275830
Toshiba TC554001AF
SRAM Memory
Toshiba
SRAM Memory 4 Mbit
Technology: 400 nm
SEU
No of tested samples:
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 8.3 krad(Si) at 3.3 and 5 V17/02/2012(1.5±0.3)x10^-13 (SEU 5V) (1.5±0.3)x10^-13 (SEU 3V)x > 8.3 krad(Si) 1275830
UCC38C45DG4
Miscellaneous
Texas Instruments
PWM
Technology: BiCMOS
LOT Number: -
Device functionality
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Device functionality failed to doses between 0.3 and 2.6 krad(Si). Wide spectrum of failures explainable by Single Event Effects in the output stage29/06/2012 0.3 < x < 2.6 krad(Si) 1241067
ADG1421
Miscellaneous
Analog Devices
Dual Switches
Technology: iCMOS
LOT Number: -
RON, ILeak, VIL, VIH
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.3 rad/s
Device functionality failed to 5 krad(Si). Increasing leakage current and decreasing threshold voltage23/03/2012 x < 5 krad(Si) 1224632
LM339D
Miscellaneous
National Semiconductor
Comparator
Technology: Bipolar
LOT Number: -
SET, IBias, ΔVOut, Gain, Response time
No of tested samples: 10
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 7.5 rad/s
The input bias current (Ibias) and the voltage gain went out of specifications to < 15 krad(Si) and between 10 and 20 krad(Si), respectively. An increase of the response time has been observed02/12/2011 Ibias < 15 krad(Si) 10 < Gain < 20 krad(Si) 1219830
LP339M
Miscellaneous
National Semiconductor
Ultra-Low Power Comparator
Technology: Bipolar
LOT Number: -
SET, IBias
No of tested samples: 7
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 7.5 rad/s
The input bias current (Ibias) went out of specifications to 0.5 krad(Si)02/12/2011 Ibias < 0.5 krad(Si) 1219830
SN74ACT245D
Miscellaneous
Texas Instruments
8 Bit Transceiver
Technology: CMOS
LOT Number: -
SET, SEL, Icc, VIL, VIH
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Device functionality failed between 21 and 42 krad(Si). High increase of the supply current30/06/2012 21 < x < 42 krad(Si) 1246888
SN74LVC16T245DGGR
Miscellaneous
Texas Instruments
16 Bit Transceiver
Technology: CMOS
LOT Number: -
SET, SEL, Icc, VIL, VIH
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 43 krad(Si)30/06/2012 x > 43 krad(Si) 1246888
MAX3491
Miscellaneous
Maxim
RS485 Transceiver
Technology: CMOS
LOT Number: -
SEU, HiZ Level, TX/RX Level, Icc
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 10 rad/s
All parameters passed up to 50 krad(Si)14/09/2012 x > 50 krad(Si) 1250547
AD5254
Miscellaneous
Analog Devices
Potentiometer
Technology: MOS / CMOS
LOT Number: -
Resistant stability, Register, EEPROM functionality, Icc
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Variation of the resistance Rpot up to 20 % after 40 krad(Si). EEPROM functionality lost between 10 and 20 krad(Si). Register read/write operation failed from 35 krad(Si). Icc increased by 200 % after 40 krad(Si).03/06/2013 Rpot > 40 krad(Si) 10 < EEPROM < 20 krad(Si) R/W < 35 krad(Si) 1289590
AD5231
Miscellaneous
Analog Devices
Potentiometer
Technology: MOS / CMOS
LOT Number: -
Resistant stability, Register, EEPROM functionality, Icc
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Variation of the resistance Rpot within 5 % up to 40 krad(Si). EEPROM functionality lost between 10 and 20 krad(Si). Register read/write operation failed from 20 krad(Si). Icc increased by 200 % after 40 krad(Si)03/06/2013 Rpot > 40 krad(Si) 10 < EEPROM < 20 krad(Si) R/W < 20 krad(Si) 1289590
LM45-IM3
Miscellaneous
Texas Instruments
Precision Temperature Sensor
Technology: Bipolar
LOT Number: 3059852EM3
ΔVOut
No of tested samples: 14
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 10.4 rad/s
All parameters passed up to 68.1 krad(Si). Highest drift of around +5.3 % (+1.5˚C). Limit: ±3˚C25/05/2013 ΔVout > 68.1 krad(Si) 1327311
LM45-IM3
Miscellaneous
Texas Instruments
Precision Temperature Sensor
Technology: Bipolar
LOT Number: -
ΔVOut
No of tested samples: 3
CEA
Particle source: Neutron
Energy: 1 MeV
Out of specifications after 3.48x10^12 n/cm2. Highest drift of around +52.9 % (+11˚C) at 1.32x10^13 n/cm229/04/2013 ΔVout < 3.48x10^12 n/cm2 1386559
LM45-IM3
Miscellaneous
Texas Instruments
Precision Temperature Sensor
Technology: Bipolar
LOT Number: -
ΔVOut
No of tested samples: 10
CEA/PSI-TBA
Particle source: Neutron
Energy: 1 MeV
Passive test with a 1 MeV neutron equivalent source for Displacement Damage characterization. Maximum observed drift 8 %, device out of spec after 2x10^12 n/cm2  ΔVout < 2x10^12 n/cm2
SPXO018042-CFPS-73-TBC
Miscellaneous
IQD Freq Prod
Oscillator
Technology: Unknown
LOT Number: -
ΔfOut, Duty cycle, Response time, SET, SEL
No of tested samples: 14
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 10.1 rad/s
All parameters passed up to 50 krad(Si)25/05/2013 x > 50 krad(Si) 1327311
MAX337CAI-TBC
Miscellaneous
Maxim
Multiplexer
Technology: Unkown
LOT Number: -
Ron, Ioff, VIL, VIH
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
High increase of all tested parameters starting from 5 krad(Si)25/03/2013 x < 5 krad(Si) 1325464
DG412-TBC
Miscellaneous
InterSil
Analog Switch
Technology: CMOS
LOT Number: -
RON, Switching functionality
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Minor variations of ON resistance. Switching functionality lost beginning from 10 krad(Si)28/06/2013 Switching < 10 krad(Si) RON > 15 krad(Si) 1330229
MAX11046
Converter
Maxim
16 Bit ADC
Technology: BiCMOS
LOT Number: -
SEU, SEL, VRef, Icc
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
VRef increases from 1.8 mV to 3.2 mV, Icc increases of about 5 mA03/06/2011(7.6±1.6)x10^-11 (SEU)x > 20 krad(Si) 1171984
PCM1702
Converter
Texas Instruments
20 Bit DAC
Technology: BiCMOS
LOT Number: -
SEU, SEL, Icc
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Increase of the current consumption of ~15mA from 10 to 30 krad(Si). No SEU observed up to a total fluence of 6.1x10^11 p/cm204/12/2011< 4.5x10^-12 (SEU)x > 30 krad(Si) 1219723
MAX5541
Converter
Maxim
16 Bit DAC
Technology: Unknown
LOT Number: 1592369
SEL, SEFI, Icc
No of tested samples: 16
PSI
Particle source: Proton
Energy: 230 MeV
No SEL or SEFI were observed up to a fluence of 2x10^12 p/cm2. The total Icc of 4 DUTs increased from around 8 mA to 11 mA.04/10/2013< 7.19x10^-14 (SEU, SEFI)x > 107.6 krad(Si) 2x10^12 p/cm2 1380070
ADS1281
Converter
Texas Instruments
Delta-Sigma converter
Technology: Unknown
LOT Number: CERN Reference
SEL, SEFI, Icc
No of tested samples: 16
PSI
Particle source: Proton
Energy: 230 MeV
No SEL, but 30 SEFI observed after a fluence of 2x10^12 p/cm2. Total current consumption on 4 DUTs increased from around 0.2 A to 3 A after 107.6 krad(Si)04/10/2013(9.38±0.2)x10^-13 (SEFI) < 7.19x10^-14 (SEL)x > 107.6 krad(Si) 2x10^12 p/cm2 1380069
ADS1271B
Converter
Texas Instruments
24 Bit ADC
Technology: Unknown
LOT Number: Unknown
SEL, Icc
No of tested samples: 20
PSI
Particle source: Proton
Energy: 230 MeV
51 SELs detected07/10/20134.36x10^-13 (SEL)201 krad(Si) 1380071
ADS1271B
Converter
Texas Instruments
24 Bit ADC
Technology: Unknown
LOT Number: Unknown
SEL, Icc
No of tested samples: 20
PSI
Particle source: Proton
Energy: 100 MeV
22 SELs detected07/10/20131.93x10^-13 (SEL)280 krad(Si) 1380071
LM317D2T
Voltage Regulator
On Semiconductor
Positive Linear Voltage Regulator
Technology: Bipolar
LOT Number: RGEA19G
SET, ΔVOut, Load regulation
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.3 rad/s
All parameters passed up to 32 krad(Si) and 6x10^12 n/cm217/02/2012 x > 32 krad(Si) x > 6x10^12 n/cm2 1219705
LM317EMP
Voltage Regulator
National Semiconductor
Positive Linear Voltage Regulator
Technology: Bipolar
LOT Number: 11AF N01A
SET, ΔVOut, Load regulation
No of tested samples: 14
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.3 rad/s
All parameters passed up to 32 krad(Si). Failure to 4x10^12 n/cm217/02/2012 x > 32 krad(Si) x < 4x10^12 n/cm2 1219705
LM317D2T
Voltage Regulator
On Semiconductor
Positive Linear Voltage Regulator
Technology: Bipolar
LOT Number: RHFA33G
ΔVOut, Icc
No of tested samples: 9
CEA
Particle source: Neutron
Energy: 1 MeV
Flux: 0.32-1.1x10^9 n/(s∙cm2) p/cm2/s
All devices went out of specifications in a range of 3.3x10^12 to 4.6x10^12 n/cm2 (Limit: ±1.5 %). The candidate configured to +18 V (Vin = +24 V) stopped working properly later than the candidates in the two other configurations29/04/2013 x < 3.3x10^12 n/cm2 1386559
LM337IMP
Voltage Regulator
National Semiconductor
Negative Linear Voltage Regulator
Technology: Bipolar
LOT Number: 14AN N02A
SET, ΔVOut, Load regulation
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.3 rad/s
All parameters passed up to 32 krad(Si). Failure to 4x10^12 n/cm217/02/2012 x > 32 krad(Si) x < 1x1^012 n/cm2 1219705
LM337IMP
Voltage Regulator
National Semiconductor
Negative Linear Voltage Regulator
Technology: Bipolar
LOT Number: 19AGN02A
ΔVOut, Icc
No of tested samples: 3
CEA
Particle source: Neutron
Energy: 1 MeV
Flux: 0.32-1.1x10^9 n/(s∙cm2) p/cm2/s
The LM337 showed a slight drift to higher values until a remote power cycle was done after 1.17x10^12 n/cm2 to verify the ability of the DUTs to turn ON again. As they were not able to restart, the devices remained OFF until the end of the test29/04/2013 x < 1.17x10^12 n/cm2 1386559
LP3990MF-1.8
Voltage Regulator
National Semiconductor
Positive Linear Voltage Regulator
Technology: Bipolar
LOT Number: -
SET, ΔVOut, Load regulation
No of tested samples: 15
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.7 rad/s
All parameters passed up to 40 krad(Si). Only slight increase of the output voltage01/06/2012 x > 40 krad(Si) 1231452
LM340MP-5.0
Voltage Regulator
National Semiconductor
Positive Voltage Regulator
Technology: Bipolar
LOT Number: -
SET, ΔVOut, Load regulation
No of tested samples: 15
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.7 rad/s
All parameters passed up to 40 krad(Si)01/06/2012 x > 40 krad(Si) 1231452
LP2980AIM5-3.3
Voltage Regulator
National Semiconductor
LDO Voltage Regulator
Technology: Bipolar
LOT Number: -
SET, ΔVOut, Load regulation
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.7 rad/s
The output voltage (Vout) went out of spec after < 16 krad(Si). The enable voltage threshold (Vih) stopped working properly between 10 and 15 krad(Si)01/06/2012 ΔVout < 16 krad(Si) 10 < Vih < 15 krad(Si) 1231452
TPS73033
Voltage Regulator
Texas Instruments
Linear Voltage Regulator
Technology: BiCMOS
LOT Number: -
ΔVOut, SET
No of tested samples: 10
PSI
Particle source: Proton
Energy: 230 MeV
Vout drifts from 3.3 V to 4.5 V (+36 %) starting from 10 krad(Si). Enable pin fails and supply current increases by 45 % after 50 krad(Si). Power cycle ok. No SETs observed23/03/2013 x < 10 krad(Si) 1319268
TPS73033
Voltage Regulator
Texas Instruments
Linear Voltage Regulator
Technology: BiCMOS
LOT Number: -
ΔVOut, Icc
No of tested samples: 10
CEA
Particle source: Neutron
Energy: 1 MeV
Passive test with a 1 MeV neutron equivalent source for Displacement Damage characterization. Maximum observed drift 1.8 %, device within spec after 2x10^12 n/cm2  > 2x10^12 n/cm2
TL431
Voltage Reference
Texas Instruments
Programmable Voltage Reference
Technology: Bipolar
LOT Number: -
SET, ΔVOut
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.3 rad/s
All parameters passed up to 20.5 krad(Si)18/03/2011 x > 20.5 krad(Si) 1171338
TL432
Voltage Reference
Texas Instruments
Voltage Reference
Technology: Bipolar
LOT Number: -
SET, ΔVOut
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.2 rad/s
All parameters passed up to 20.3 krad(Si)18/03/2011 x > 20.3 krad(Si) 1171338
LM4041
Voltage Reference
National Semiconductor
Precision Voltage Reference
Technology: Bipolar
LOT Number: -
SET, ΔVOut
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8 rad/s
All parameters passed up to 20.0 krad(Si)18/03/2011 x > 20 krad(Si) 1171338
LM334
Current Source
National Semiconductor
Adjustable Current Source
Technology: Bipolar
LOT Number: 1469226
ΔVOut, ΔIOut
No of tested samples: 40
PSI
Particle source: Proton
Energy: 230 MeV
Sensitivity to radiation decreases with higher currents and higher supply voltages. Drift at 10 uA, 60 krad(Si): -97 % (12 V, 100 kΩ), -8.7 % (18 V, 100 kΩ). Drift at 1 mA: -2.1 % (12 V, 1 kΩ), -1.9 % (18 V, 1 kΩ). All devices tested at an output current 25/05/2013 < 21.4 krad(Si) (12 V, 10 uA) < 30.krad(Si) (18 V, 10 uA) > 65/60krad(Si) (12 V/18 V, 1 mA) 1327311
LM334
Current Source
National Semiconductor
Adjustable Current Source
Technology: Bipolar
LOT Number: -
SET, ΔVOut, Load regulation
No of tested samples: 16
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.3 rad/s
Sensitivity to radiation decreases with higher currents. Drift range from 9 % to 1.6 % at 10 uA and 1 mA, respectively. All parameters passed up to 30 krad(Si)23/03/2012 < 40 krad(Si) (10 uA) > 60 krad(Si) (1 mA) 1224739
LM334
Current Source
National Semiconductor
Adjustable Current Source
Technology: Bipolar
LOT Number: -
ΔIOut
No of tested samples: 9
CEA
Particle source: Neutron

The output current of the LM334 supplied at +12 V and +18 V was out of specifications (Limit: 0.05 %/V) to a fluence of 3.24∙10^12 n/cm2 and 3.52∙10^12 n/cm2, respectively. Set to 1 mA, the LM334 was supplied by +12 V and went out of specifications after29/04/2013   1386559
LT1236A
Voltage Reference
Linear Technologies
Voltage Reference
Technology: Buried Zener
LOT Number: -
ΔVOut, SET
No of tested samples: 10
PSI
Particle source: Proton
Energy: 230 MeV
Went out of specifications (±0.05 %) after 5 krad(Si). Vout drifts -0.3 % after 50 krad(Si). No SETs observed.23/03/2013 ΔVout < 5 krad(Si) 1319268
LT1236
Voltage Reference
Linear Technologies
Voltage Reference
Technology: Buried Zener
LOT Number: -
ΔVOut
No of tested samples: 10
CEA
Particle source: Neutron
Energy: 1 MeV
Passive test with a 1 MeV neutron equivalent source for Displacement Damage characterization. Maximum observed drift 0.02 %, device within spec after 2e12 n/cm2  > 2x10^12 n/cm2
MAX6350
Voltage Reference
Maxim
Precision Voltage Reference
Technology: Buried zener
LOT Number: -
SET, ΔVOut
No of tested samples: 11
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.7 rad/s
The output voltage (Vout) went out of specifications between 1.2 and 3.9 krad(Si). Degradation level shows initial failure of the device01/06/2012 1.2 < Vout < 3.9 krad(Si) 1231452
MAX6341CSA
Voltage Reference
Maxim
Voltage Reference
Technology: Buried Zener
LOT Number: -
SET, ΔVOut
No of tested samples: 1
PSI
Particle source: Proton
Energy: 230 MeV
Drift of -0.781mV after 10.6 krad(Si). Corresponds to -30 μV/100 rad. Went out of specification after 3 krad(Si)05/02/2011 ΔVout < 3 krad(Si) 1171336
ADR434
Voltage Reference
Analog Devices
Voltage Reference
Technology: XFET
LOT Number: B# 132 4833
SET, ΔVout
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.9 rad/s
All devices went out of specification to 3.3 krad(Si). Maximum drift after 40 krad(Si) was -10 mV (-0.24 % regarding initial value)26/10/2012 ΔVout < 3.3 krad(Si) 1280154
LT1084
Voltage Regulator
Linear Technologies
Positive Adjustable Regulator
Technology: Bipolar
LOT Number: -
SET, ΔVOut
No of tested samples: 5
Fraunhofer
Particle source: Gamma

Fixed output voltage of 5.5 V went out of specifications (±0.3 %) after 1.3 krad(Si). Highest drop of load regulation was -8.2 % after 40 krad(Si). Then recovered to higher values. Slight annealing observed when beam is off20/12/2013 ΔVout < 1.3 krad(Si) 1371092
BST82
Power MosFET
Philips
Power MOSFET
Technology: N-channel TrenchMOSTM
LOT Number: -
SEB
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 32 krad(Si) and a fluence of 6.0x10^11 p/cm2. No SEB observed for 0.5 < (Vdss/BVdss) < 0.903/06/2012< 5.0x10^-12 (SEB)x > 32 krad(Si) x > 6.0x10^11 p/cm2 1246969
IRFR9220
Power MosFET
International Rectifier
Power MOSFET
Technology: P-channel HEXFET®
LOT Number: -
SEB
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 32.1 krad(Si) and a fluence of 6.0x10^11 p/cm2. No SEB observed for 0.5 < (Vdss/BVdss) < 103/06/2012< 4.5x10^-12 (SEB)x > 32.1 krad(Si) x > 6.0x10^11 p/cm2 1246969
IRFB4310
Power MosFET
International Rectifier
Power MOSFET
Technology: N-channel HEXFET®
LOT Number: -
SEB
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
SEB at Vdss/BVdss ≥ 0.8. All events were destructive03/06/2012(7.8±1.6)x10^-10 (SEB)x < 1.2x10^9 p/cm2 1246969
STD10NF
Power MosFET
STMicroelectronics
Power MOSFET
Technology: N-channel Low gate charge STripFETTM II
LOT Number: -
SEB
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
SEB at Vdss/BVdss ≥ 0.8 (BVdss = 100 V)03/06/2012(8.8±2)x10^-10 (SEB)x > 15 krad(Si) x > 6.0x10^11 p/cm2 1246969
SUD23N06-31L-E3
Power MosFET
Vishay
Power MOSFET
Technology: N-channel TrenchFET®
LOT Number: L84B
SEB, VGSTh,IDSLeak
No of tested samples: 12
PSI
Particle source: Proton
Energy: 230 MeV
SEB at Vdss/BVdss ≥ 1 (BVdss = 60 V). Irradiation at 30 V up to 45 krad(Si) resulted in IDSLeak of 33.3 nA. VGS threshold shifted from 2.98 V to 1.88 V29/06/20139.52x10^-10 (SEB)IDSLEAK, VGSTh > 45 krad(Si) SEB < 1.56x10^11 p/cm2 1337970
IRLR3105PBF
Power MosFET
International Rectifier
Power MOSFET
Technology: N-channel HEXFET®
LOT Number: P136D
SEB, VGSTh,IDSLeak
No of tested samples: 12
PSI
Particle source: Proton
Energy: 230 MeV
SEB at Vdss/BVdss ≥ 1 (BVdss = 55 V). Irradiation at 30 V up to 44 krad(Si) resulted in IDSLeak of 4.7 nA. VGS threshold shifted from 2.64 V to 2.00 V29/06/20132.16x10^-11 (SEB)IDSLEAK, VGSTh > 44 krad(Si) SEB < 2.50x10^11 p/cm2 1337970
IRFR4105ZPBF
Power MosFET
International Rectifier
Power MOSFET
Technology: N-channel HEXFET®
LOT Number: 128P
SEB, VGSTh,IDSLeak
No of tested samples: 9
PSI
Particle source: Proton
Energy: 230 MeV
SEB at Vdss/BVdss ≥ 1 (BVdss = 55 V). Irradiation at 30 V up to 45 krad(Si) resulted in IDSLeak of 4.7 nA. VGS threshold shifted from 3.94 V to 2.00 V29/06/20131.05x10^-9 (SEB)IDSLEAK, VGSTh > 45 krad(Si) SEB < 2.5x10^11 p/cm2 1337970
INA111
Operational Amplifier
Burr-Brown
Instrumentation Amplifier
Technology: JFET
LOT Number: 23ANE9T
SET, SEL, ΔVout, IBias
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.9 rad/s
FET input sensitive to high dose rates (photocurrent). Therefore, input bias current (Ibias) went out of spec when beam was present. Remaining parameters within specs01/06/2012 > 40 krad(Si) 1231452
LM7372
Operational Amplifier
Texas Instruments
Dual Operational Amplifier
Technology: Bipolar
LOT Number: 21ACLM7372MR
SET, SEL, ΔVout, IBias
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 40 krad(Si)01/06/2012 > 40 krad(Si) 1231452
MAX4238
Operational Amplifier
Maxim
Precision Amplifier
Technology: BiCMOS
LOT Number: AAZZ
SET, SEL, ΔVout, IBias
No of tested samples: 9
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.8 rad/s
Input bias current (Ibias) and input offset voltage (Vos) within spec until < 23 krad(Si). Then, device functionality failed to higher doses01/06/2012 x < 23 krad(Si) 1231452
ADA4899
Operational Amplifier
Analog Devices
High Speed Operational Amplifier
Technology: Bipolar (XFCB process)
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 1
PSI
Particle source: Proton

All parameters passed up to 12.2 krad(Si)05/02/2011 x > 12.2 krad(Si) 1171336
LMH6551MA
Operational Amplifier
National Semiconductor
High Speed Operational Amplifier
Technology: Bipolar
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 1
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 11.7 krad(Si)05/02/2011 x > 11.7 krad(Si) 1171336
MAX410ESA
Operational Amplifier
Maxim
Precision Operational Amplifier
Technology: Bipolar
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 1
PSI
Particle source: Proton

All parameters passed up to 11.3 krad(Si)05/02/2011 x > 11.3 krad(Si) 1171336
OPA2227
Operational Amplifier
Burr-Brown
High Precision Operational Amplifier
Technology: Bipolar
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 6
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8 rad/s
All parameters passed up to 22.0 krad(Si)18/03/2011 x > 22.0 krad(Si) 1171338
OPA2227
Operational Amplifier
Burr Brown
High Precision Operational Amplifier
Technology: -
LOT Number: -
ΔVOut, Icc
No of tested samples: 3
CEA
Particle source: Neutron
Energy: 1 MeV
Flux: 0.32-1.1x10^9 n/(s∙cm2) p/cm2/s
Only a slight variation of +0.2 % could be observed on the OPA222729/04/2013 ΔVout > 3.3x10^12 n/cm2 1386559
INA141
Operational Amplifier
Burr-Brown
Low Power Operational Amplifier
Technology: Bipolar
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8 rad/s
Vout went out of specification at 13 krad(Si)18/03/2011 ΔVout < 13.0 krad(Si) 1171338
TL072C
Operational Amplifier
Texas Instruments
Low Noise Dual Operational Amplifier
Technology: JFET
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8 rad/s
All parameters passed up to 20 krad(Si)18/03/2011 x > 20 krad(Si) 1171338
INA146
Operational Amplifier
Texas Instruments
High Voltage Difference Amplifier
Technology: Unknown
LOT Number: -
SET, SEL, ΔVout
No of tested samples: 8
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.1 rad/s
All parameters passed up to 24 krad(Si)  x > 24 krad(Si)
INA146
Operational Amplifier
Burr Brown
High Voltage Difference Amplifier
Technology: -
LOT Number: -
ΔVOut, Icc
No of tested samples: 6
CEA
Particle source: Neutron
Energy: 1 MeV
Flux: 0.32-1.1x10^9 n/(s∙cm2) p/cm2/s
INA146 showed variations of almost ±200 %. Moreover, the variation was depending on the gain which is a typical indicator for a sensitive input offset29/04/2013 ΔVout < 3.3x10^12 n/cm2 1386559
INA2128UG4-TBC
Operational Amplifier
Texas Instruments
Dual, Low Power Instrumentation Amplifier
Technology: Unknown
LOT Number: -
SET, ΔVout, IBias
No of tested samples: 4
PSI
Particle source: Proton
Energy: 230 MeV
Ibias increased from 1-2 nA to more than 150 nA after 40 krad(Si). Went out of specifications around 2.5 krad(Si). Vout remained stable until 50 krad(Si). No SETs detected28/06/2013 Ibias < 2.5 krad(Si) ΔVout > 50 krad(Si) 1334114
OPA2134UAG4-TBC
Operational Amplifier
Texas Instruments
High Performance Audio Operational Amplifier
Technology: Bipolar + FET input
LOT Number: -
SET, ΔVout, IBias
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 50 krad(Si). Vout drifted by 0.1 %28/06/2013 x > 50 krad(Si) 1335978
THS4130-TBC
Operational Amplifier
Texas Instruments
Diff Amplifier
Technology: Bipolar
LOT Number: -
ΔVout, Ibias, Enable, SET
No of tested samples: 11
PSI
Particle source: Proton
Energy: 230 MeV
All parameters passed up to 50 krad(Si). Ibias drift of +6 %, Vout remains stable. No SETs detected23/03/2013 x > 50 krad(Si) 1319267
LT1930
Converter
Linear Technologies
Step-Up DC/DC Converter
Technology: Unknown
LOT Number: -
SET, ΔVout
No of tested samples: 5
Fraunhofer
Particle source: Gamma

Vout increased by maximum +4 % after 100 krad(Si). Annealing observed when beam is off. No SETs detected20/12/2013 ΔVout > 100 krad(Si) 1371092
FGCuLite
Prototype
CERN
Communication device
Technology: Unknown
LOT Number: -
SEE, TID
No of tested samples: 1
H4IRRAD
Particle source: Mixed

No observable TID power consumption increase; No SEL events detected on power supplies; No SET/SEU/SEFI events detected15/11/2012< 1.8x10^-11 (SEL)x > 7.7 krad(Si) x > 1.3x10^11 p/cm2 (HEH) x > 5.8x10^11 p/cm2 (1 MeV Neq) 1380068
MIC37302BR
Voltage Regulator
Micrel
LDO Voltage Regulator
Technology: Bipolar
LOT Number: -
SET, ΔVOut, Load regulation
No of tested samples: 9
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9.9 rad/s
Flux: 1.6x10^8 p/cm2/s
Enable pin failed beginning from 20 krad(Si). After 40 krad(Si), all devices were not more operational due to the damaged functionality of the enable pin. On operational devices, Vout remained stable21/09/2013 x < 20 krad(Si) 1372879
SN74LVC2T45
Miscellaneous
Texas Instruments
2 Bit Transceiver
Technology: CMOS
LOT Number: -
SET, SEL, Icc, VIL, VIH
No of tested samples: 5
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 8.98 rad/s
All parameters passed up to 50.0 krad(Si)21/09/2013 x > 50 krad(Si) 1341327
Power Supply Card
Miscellaneous
CERN
Beam Screen Heater
Technology:
LOT Number: -
SET, SEL, Icc, ΔVout
No of tested samples: 1
PSI
Particle source: Proton
Energy: 230 MeV
All tested devices on the card received doses between of 22-137 krad(Si). All parameters remained within the specified limits. No SEEs observed  22 > x > 1370 krad(Si) 1373030
THS4521
Operational Amplifier
Texas Instruments
Diff Amplifier
Technology: CMOS
LOT Number: -
Ibias, ΔVout, SET
No of tested samples: 11
PSI
Particle source: Proton
Energy: 230 MeV
Flux: 1.76x10^8 p/cm2/s
All parameters passed up to 50.0 krad(Si). No variations on the tested parameters observed21/09/2013 x > 50 krad(Si) 1364803
ADS1281
Converter
Analog Devices
ADC 24 bit
Technology:
SEE and TID
No of tested samples: 3
PSI
Particle source: Proton
Energy: 230 MeV
Dose rate: 9 rad/s
Flux: 1.7x10^8 p/cm2/s
Single Event recognized as a single bit flips in the output word: 191 occurrences. Oscillations have been recorded with a length of about 40 samples. ADC stops working for around 62 samples (22 occurencies). Also very long stops occurs of several minutes. Gain and Offset jumps have been observed: 2 occurencies.25/04/2014   1541966